Resist Images
High Resolution Optical Photomask Lithography
0.5 mm isolated resist space 0.3 mm isolated resist space

PFI88A5 TMAH NMD-W
180 s dev.time / PEB / 200mJ/cm2
Focus Exposure Process Latitude Improvements 
(0.5 mm space)
Current
Photomask Process
IP3600 (0.5 mm /0.26N/60 s dev./ No PEB)
Improved
Photomask Process
IP3600 (0.5 mm /0.20N/180 s dev./ PEB)
High Resolution
Photomask Process
PFI88A5 (0.5 mm /0.26N/180 s dev./ PEB)
Manufacturing trails at the DPI Reticle Technology Center