High Resolution Optical Photomask Lithography
0.5 mm isolated resist space	0.3 mm isolated resist space
PFI88A5 TMAH NMD-W 180 s dev.time / PEB / 200mJ/cm2

Focus Exposure Process Latitude Improvements  (0.5 mm space)
Current Photomask Process	IP3600 (0.5 mm /0.26N/60 s dev./ No PEB)
Improved Photomask Process	IP3600 (0.5 mm /0.20N/180 s dev./ PEB)
High Resolution Photomask Process	PFI88A5 (0.5 mm /0.26N/180 s dev./ PEB)
Manufacturing trails at the DPI Reticle Technology Center